Temperature dependence of the Raman-active phonon frequencies in indium sulfide

摘要

The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A g intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.